To satisfy the growing demand for high efficiency and reliability in many power applications, Infineon has recently released the product that features its advance OptiMOS 6 100V power MOSFET technology, which promises record-high standards for high-frequency switching applications.
Based on its expanded safe operating area (SOA) and “the Industry best” RDS(ON), It is claimed to be well-suit for Battery Management System (BMS) and Battery Powered Applications (BPA).
The OptiMOS 6 power MOSFET further emphasizes the drive to promote cleaner energy by providing improved drain-source on-state resistance (RDS(ON)), gate charge (Qg), and figures of merit (FOM) values, which can be important for energy loss minimization in high switching frequency applications, such as telecommunication and solar powering.
OptiMOS 6 leveraged novel design concept to improve RDS(ON) and FOM value, which are the determination key parameters for the performance of MOSFET technology in high switching frequency applications. Compared with the OptiMOS 5 technology, it offers 18% RDS(ON) reduction, the FOM and gate-to-drain charge FOM(FOMgd) has respectively improved by 29% and 42%. Features a small footprint, SuperSO8 5x6 and PQFN 3.3x3.3 packages to achieve higher efficiencies. It has energy consumption and cost-saving potential.
Benefits offered to high-frequency applications include high-efficiency, low switching and conduction losses, cost-saving for System, long equipment lifetime, environmental friendliness, improved power density, simpler thermal design, and minimized paralleling.